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Journal Papers (refereed)
S. Ghosh, S. Das, S. M. Dinara, A. Bag, A. Chakraborty, P. Mukhopadhyay, S. K. Jana, and D. Biswas
"OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations"
IEEE Transactions of Electron Devices, 65(4), pp. 1333-1339
Chakraborty, A., Bag, A., Mukhopadhyay, P., Ghosh, S., and Biswas, D.
"Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique"
Semiconductor Science and Technology, 33(3), #035009
Chakraborty, A., Ghosh, S., Mukhopadhyay, P., Das, S., Bag, A., and Biswas, D.
"Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis"
Superlattices and Microstructures, 113, pp. 147-152
F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, and W.V. Schoenfeld
"Fast growth rate of epitaxial beta-Ga2O3 by close coupled showerhead MOCVD"
Journal of Crystal Growth, 475, pp. 77-82
F. Alema, B. Hertog, O.  Ledyaev, D. Volovik, G. Thoma, R. Miller, A. Osinsky, P. Mukhopadhyay, S. Bakhshi, H. Ali, W.V. Schoenfeld
"Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film"
Physica Status Solidi A-Applications and Materials Science, 214(5), 1600688
Conference Proceedings
M. Toporkov, P. Mukhopadhyay, H. Ali, V. Beletsky, F. Alema, A. Osinsky, and W.V. Schoenfeld
"MgZnO grown by molecular beam epitaxy on n-type ß-Ga2O3 for uv Schottky barrier solar-blind photodetectors"
SPIE Photonics West, San Francisco, California, 10105
F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, W.V. Schoenfeld, E. Ahmadi, and J. Speck
"Vertical solar blind Schottky photodiode based on Homoepitaxial Ga2O3 thin film"
SPIE Photonics West, San Francisco, California, 10105
Invited Presentations
W. V. Schoenfeld*, M. Toporkov, and P. Mukhopadhyay
"Invited Talk: Tin-Gallium-Oxide-Based UV-C Detectors"
SPIE Photonics West, Oxide-based Materials and Devices IX, San Francisco, CA (2018).
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